R. Akimoto, R. Kuroda, A. Teramoto, Takezo Mawaki, S. Ichino, T. Suwa, S. Sugawa
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引用次数: 3
Abstract
In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random telegraph noise (RTN), such as amplitude and time constants under various drain-to-source voltage (VDS) conditions were extracted and analyzed. It was found that RTN is dominated by traps at the minimum gate width in the channel formed under each of the operating bias conditions, and traps at the source side are most influential under a large VDS. The trap location along the source-drain direction is estimated by the VDS dependencies of RTN characteristics.
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