Library setup for epitaxial layer dopant profile using spreading resistance profiling analysis

Lim Saw Sing, L. Way
{"title":"Library setup for epitaxial layer dopant profile using spreading resistance profiling analysis","authors":"Lim Saw Sing, L. Way","doi":"10.1109/IPFA.2014.6898167","DOIUrl":null,"url":null,"abstract":"The paper describes an approach to establish library for epitaxial layer monitoring using spreading resistance profiling (SRP) technique. This library can be used as complementary technique for conventional epitaxial monitoring such as inline four-point probe (FPP) or surface charge profiler (SCP).","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"59 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The paper describes an approach to establish library for epitaxial layer monitoring using spreading resistance profiling (SRP) technique. This library can be used as complementary technique for conventional epitaxial monitoring such as inline four-point probe (FPP) or surface charge profiler (SCP).
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利用扩展电阻谱分析建立外延层掺杂谱库
本文介绍了一种利用扩频电阻谱技术建立外延层监测库的方法。该库可作为传统外延监测的补充技术,如直列四点探针(FPP)或表面电荷分析器(SCP)。
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