{"title":"Evolution of directed ion beams from doping to materials engineering","authors":"A. Renau","doi":"10.1109/IEDM.2014.7047157","DOIUrl":null,"url":null,"abstract":"We review recent changes to implanter processing capabilities, including the adoption of cryogenic implants to reduce leakage and contact resistance as well as high temperature implants for finFETs. We discuss some specific 3D challenges and introduce a new process technology for 3D that uses directed ion beams for material modification including implant, etch and deposition.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"55 Suppl 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We review recent changes to implanter processing capabilities, including the adoption of cryogenic implants to reduce leakage and contact resistance as well as high temperature implants for finFETs. We discuss some specific 3D challenges and introduce a new process technology for 3D that uses directed ion beams for material modification including implant, etch and deposition.
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