Integration and reliability of CVD Ru cap for Cu/Low-k development

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090402
C. Yang, Daniel C. Edelstein, Kaushik Chanda, Ping-Chuan Wang, Chenming Hu, E. Liniger, Stephan A. Cohen, James R. Lloyd, Baozhen Li, F. Mcfeely, R. Wisnieff, T. Ishizaka, F. M. Cerio, K. Suzuki, Jonathan Rullan, A. Selsley, M. Jomen
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引用次数: 4

Abstract

Selective CVD Ru cap deposition process has been developed for BEOL Cu/Low-k integration. Selectivity of CVD Ru deposition between Cu and dielectrics is investigated. Electrical performance, electromigration (EM) lifetime, voltage ramp (I–V), and time -dependent-dielectric-breakdown (TDDB) are also characterized for Cu interconnects capped with CVD Ru. This selective CVD Ru cap process is a good candidate for 22nm and beyond technology nodes.
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用于Cu/Low-k开发的CVD Ru帽的集成和可靠性
开发了用于BEOL Cu/Low-k集成的选择性CVD Ru帽沉积工艺。研究了Cu与介质间CVD Ru沉积的选择性。电性能、电迁移(EM)寿命、电压斜坡(I-V)和时间相关介电击穿(TDDB)也被表征为Cu互连与CVD Ru封顶。这种选择性CVD Ru帽工艺是22nm及以上技术节点的良好候选工艺。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2009 IEEE International Interconnect Technology Conference
2009 IEEE International Interconnect Technology Conference
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