On reliability enhancement using adaptive core voltage scaling and variations on nanoscale FPGAs

P. Pfeifer, Z. Plíva, P. Weckx, B. Kaczer
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Abstract

Rapidly growing portfolio of new technologies in design and manufacturing of advanced integrated circuits allow higher integration of complex structures in ultra-high nano-scale densities. However, the real new devices are sensitive subjects to unacceptable effects of changes of the internal nanostructures. Changes in parameters due to process variations or device aging along the working or its life-time can result in significant in large timing variations or critical BTI-inducted delays and may affect the final design quality and dependability, may result in delay faults, up to the device or equipment malfunction or failure. Also power supply voltage or temperature variations do typically result in significant changes of timing parameters. The presented and tested circuit, method and approach allows extremely simple control of the core voltage during critical operations or during the device lifetime. This paper include also key results of measurement of selected low-power programmable device manufactured using 28 nm low-power TSMC process, a brief comparison to the previous 45 nm LP technology node, as well as a short prediction to the next 22 nm technology node. The presented approach, data and results can also be used in design of various dependable systems.
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基于自适应磁芯电压缩放和纳米级fpga的可靠性增强研究
在设计和制造先进集成电路的新技术的快速增长组合允许在超高纳米尺度密度的复杂结构的更高集成度。然而,真正的新型器件对内部纳米结构的变化具有不可接受的敏感性。由于工艺变化或设备在工作或其寿命期间老化而导致的参数变化可能导致重大的大时间变化或关键的bti诱导延迟,并可能影响最终的设计质量和可靠性,可能导致延迟故障,直至设备或设备故障或失败。此外,电源电压或温度的变化通常会导致定时参数的显著变化。所提出和测试的电路、方法和方法允许在关键操作或设备使用寿命期间对核心电压进行极其简单的控制。本文还包括采用28纳米低功耗台积电工艺制造的低功耗可编程器件的关键测量结果,与先前45纳米LP技术节点的简要比较,以及对下一个22纳米技术节点的简短预测。所提出的方法、数据和结果也可用于各种可靠系统的设计。
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