{"title":"Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method","authors":"Yandong He, Ganggang Zhang, Xing Zhang","doi":"10.1109/IPFA.2014.6898175","DOIUrl":null,"url":null,"abstract":"Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
