{"title":"Characterization of Silicon Photonics Ring Modulator for 10 Gb/s","authors":"C. Finardi, S. Tenenbaum, R. Panepucci","doi":"10.1109/SBMicro.2019.8919439","DOIUrl":null,"url":null,"abstract":"This paper presents the characterization of an electro-optical modulator integrated to an optical transmitter based on silicon photonics technology for high rates. The modulator is implemented through a micro-ring structure, due to its compactness and low modulating voltage. The device was characterized in electro-optical (EO) band and its performance analyzed in data transmission up to 10 Gb/s at $\\lambda =1544 nm$.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents the characterization of an electro-optical modulator integrated to an optical transmitter based on silicon photonics technology for high rates. The modulator is implemented through a micro-ring structure, due to its compactness and low modulating voltage. The device was characterized in electro-optical (EO) band and its performance analyzed in data transmission up to 10 Gb/s at $\lambda =1544 nm$.
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