M. Kao, Chih-Chao Yang, Tsung-Ta Wu, Tung-Ying Hsieh, Wen-Hsien Huang, Hsing-Hsiang Wang, C. Shen, W. Yeh, Meng-Fan Chang, J. Shieh
{"title":"a-SiGeC thin film photovoltaic enabled self-power monolithic 3D IC under indoor illumination","authors":"M. Kao, Chih-Chao Yang, Tsung-Ta Wu, Tung-Ying Hsieh, Wen-Hsien Huang, Hsing-Hsiang Wang, C. Shen, W. Yeh, Meng-Fan Chang, J. Shieh","doi":"10.1109/VLSI-TSA.2016.7480524","DOIUrl":null,"url":null,"abstract":"Low temperature a-SiGeC thin film photovoltaic (TFPV) ambient light-energy harvesters monolithically integrated with high performance 3D sequentially stackable device were demonstrated in this article. The 3D stackable device with threshold voltage engineering and driving current boosting technologies enable excellent current controllability to achieve low Ioff and high Ion operation condition for integrated circuit design. The monolithically stacking of Si thin-film energy harvester, which provide output power (21.93uW/cm2) under 450 lux indoor illumination, envisions self-power and low cost 3D+IC for internet of things.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Low temperature a-SiGeC thin film photovoltaic (TFPV) ambient light-energy harvesters monolithically integrated with high performance 3D sequentially stackable device were demonstrated in this article. The 3D stackable device with threshold voltage engineering and driving current boosting technologies enable excellent current controllability to achieve low Ioff and high Ion operation condition for integrated circuit design. The monolithically stacking of Si thin-film energy harvester, which provide output power (21.93uW/cm2) under 450 lux indoor illumination, envisions self-power and low cost 3D+IC for internet of things.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
