S. Yoshii, T. Yokogawa, A. Tsujimura, Y. Sasai, J. Merz
{"title":"Demonstration of blue vertical-cavity surface-emitting laser diode","authors":"S. Yoshii, T. Yokogawa, A. Tsujimura, Y. Sasai, J. Merz","doi":"10.1109/DRC.1995.496302","DOIUrl":null,"url":null,"abstract":"We report on the first demonstration of an electrically-pumped blue VCSEL. Laser action was achieved at a wavelength of 484 nm under pulsed current injection at 77 K. The VCSEL structure was composed of a CdZnSe/ZnSe multi-quantum-well active layer, ZnSe cladding layers, and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). The CdZnSe/ZnSe epitaxial layers were grown by molecular beam epitaxy (MBE) directly on a GaAs (100) substrate at a growth temperature of 270/spl deg/C. The MQW structure consisted of Cd/sub 0.2/Zn/sub 0.8/Se quantum wells and ZnSe barriers.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report on the first demonstration of an electrically-pumped blue VCSEL. Laser action was achieved at a wavelength of 484 nm under pulsed current injection at 77 K. The VCSEL structure was composed of a CdZnSe/ZnSe multi-quantum-well active layer, ZnSe cladding layers, and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). The CdZnSe/ZnSe epitaxial layers were grown by molecular beam epitaxy (MBE) directly on a GaAs (100) substrate at a growth temperature of 270/spl deg/C. The MQW structure consisted of Cd/sub 0.2/Zn/sub 0.8/Se quantum wells and ZnSe barriers.
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