Vector Magnetic Current Imaging of an 8 nm Process Node Chip and 3D Current Distributions Using the Quantum Diamond Microscope

S. M. Oliver, D. Martynowych, M. Turner, David A. Hopper, R. Walsworth, E. Levine
{"title":"Vector Magnetic Current Imaging of an 8 nm Process Node Chip and 3D Current Distributions Using the Quantum Diamond Microscope","authors":"S. M. Oliver, D. Martynowych, M. Turner, David A. Hopper, R. Walsworth, E. Levine","doi":"10.31399/asm.cp.istfa2021p0096","DOIUrl":null,"url":null,"abstract":"\n The increasing trend for industry adoption of three-dimensional (3D) microelectronics packaging necessitates the development of new and innovative approaches to failure analysis. To that end, our team is developing a tool called the quantum diamond microscope (QDM) that leverages an ensemble of nitrogenvacancy (NV) centers in diamond for simultaneous wide fieldof- view, high spatial resolution, vector magnetic field imaging of microelectronics under ambient conditions [1,2]. Here, we present QDM measurements of two-dimensional (2D) current distributions in an 8 nm process node flip chip integrated circuit (IC) and 3D current distributions in a custom, multi-layer printed circuit board (PCB). Magnetic field emanations from the C4 bumps in the flip chip dominate the QDM measurements, but these prove to be useful for image registration and can be subtracted to resolve adjacent current traces on the micron scale in the die. Vias, an important component in 3D ICs, display only Bx and By magnetic fields due to their vertical orientation, which are challenging to detect with magnetometers that traditionally only measure the Bz component of the magnetic field (orthogonal to the IC surface). Using the multi-layer PCB, we demonstrate that the QDM's ability to simultaneously measure Bx, By, and Bz magnetic field components in 3D structures is advantageous for resolving magnetic fields from vias as current passes between layers. The height difference between two conducting layers is determined by the magnetic field images and agrees with the PCB design specifications. In our initial steps to provide further z depth information for current sources in complex 3D circuits using the QDM, we demonstrate that, due to the linear properties of Maxwell's equations, magnetic field images of individual layers can be subtracted from the magnetic field image of the total structure. This allows for isolation of signal from individual layers in the device that can be used to map embedded current paths via solution of the 2D magnetic inverse. Such an approach suggests an iterative analysis protocol that utilizes neural networks trained with images containing various classes of current sources, standoff distances, and noise integrated with prior information of ICs to subtract current sources layer by layer and provide z depth information. This initial study demonstrates the usefulness of the QDM for failure analysis and points to technical advances of this technique to come.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2021p0096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The increasing trend for industry adoption of three-dimensional (3D) microelectronics packaging necessitates the development of new and innovative approaches to failure analysis. To that end, our team is developing a tool called the quantum diamond microscope (QDM) that leverages an ensemble of nitrogenvacancy (NV) centers in diamond for simultaneous wide fieldof- view, high spatial resolution, vector magnetic field imaging of microelectronics under ambient conditions [1,2]. Here, we present QDM measurements of two-dimensional (2D) current distributions in an 8 nm process node flip chip integrated circuit (IC) and 3D current distributions in a custom, multi-layer printed circuit board (PCB). Magnetic field emanations from the C4 bumps in the flip chip dominate the QDM measurements, but these prove to be useful for image registration and can be subtracted to resolve adjacent current traces on the micron scale in the die. Vias, an important component in 3D ICs, display only Bx and By magnetic fields due to their vertical orientation, which are challenging to detect with magnetometers that traditionally only measure the Bz component of the magnetic field (orthogonal to the IC surface). Using the multi-layer PCB, we demonstrate that the QDM's ability to simultaneously measure Bx, By, and Bz magnetic field components in 3D structures is advantageous for resolving magnetic fields from vias as current passes between layers. The height difference between two conducting layers is determined by the magnetic field images and agrees with the PCB design specifications. In our initial steps to provide further z depth information for current sources in complex 3D circuits using the QDM, we demonstrate that, due to the linear properties of Maxwell's equations, magnetic field images of individual layers can be subtracted from the magnetic field image of the total structure. This allows for isolation of signal from individual layers in the device that can be used to map embedded current paths via solution of the 2D magnetic inverse. Such an approach suggests an iterative analysis protocol that utilizes neural networks trained with images containing various classes of current sources, standoff distances, and noise integrated with prior information of ICs to subtract current sources layer by layer and provide z depth information. This initial study demonstrates the usefulness of the QDM for failure analysis and points to technical advances of this technique to come.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
8纳米制程节点芯片的矢量磁流成像及量子金刚石显微镜下的三维电流分布
三维(3D)微电子封装的工业采用趋势日益增加,需要开发新的和创新的方法来分析失效。为此,我们的团队正在开发一种称为量子金刚石显微镜(QDM)的工具,该工具利用金刚石中的氮空位(NV)中心集合,在环境条件下同时实现宽视场,高空间分辨率的微电子矢量磁场成像[1,2]。在这里,我们展示了QDM测量8 nm工艺节点倒装集成电路(IC)中的二维(2D)电流分布和定制多层印刷电路板(PCB)中的三维电流分布。倒装芯片中C4凸起的磁场辐射主导着QDM测量,但这些被证明对图像配准有用,并且可以减去以解决芯片中微米尺度上的相邻电流走线。过孔是3D集成电路中的一个重要组件,由于其垂直方向,仅显示Bx和By磁场,这对于传统上仅测量磁场的Bz分量(与IC表面正交)的磁力计来说是具有挑战性的。使用多层PCB,我们证明了QDM在3D结构中同时测量Bx, By和Bz磁场分量的能力有利于在电流通过层之间时从过孔中分辨磁场。两个导电层之间的高度差由磁场图像决定,并与PCB设计规范一致。在我们使用QDM为复杂3D电路中的电流源提供进一步的z深度信息的初始步骤中,我们证明,由于麦克斯韦方程的线性特性,单个层的磁场图像可以从总体结构的磁场图像中减去。这允许隔离来自器件中各个层的信号,这些层可用于通过二维磁逆的解决方案来映射嵌入的电流路径。这种方法提出了一种迭代分析协议,该协议利用包含各种类型电流源、距离和集成电路先验信息的噪声的图像训练的神经网络,逐层减去电流源并提供z深度信息。这项初步研究证明了QDM对故障分析的有用性,并指出了该技术未来的技术进步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
SCM Application and Failure Analysis Procedure for Ion-Implantation Issues in Power Devices Low Angle Annular Dark Field Scanning Transmission Electron Microscopy Analysis of Phase Change Material Report Classification for Semiconductor Failure Analysis Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers Logo Classification and Data Augmentation Techniques for PCB Assurance and Counterfeit Detection
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1