A highly linear low-noise amplifier using a wideband linearization technique with tunable multiple gated transistors

Abstract

A wideband linearization technique using tunable multiple gated transistors (MGTRs) is proposed. Extra tunable input capacitors and the modified derivative superposition (DS) method are also adopted to increase the amplifier's linearity at RF. A low-noise amplifier (LNA) employing the proposed linearization technique has been developed with 0.18-μm CMOS process for various mobile TV standards in UHF band (470-862 MHz). The LNA achieves 19-dBm IIP3, 16.5-dB gain, and 1.33-dB NF with 10.8-mW power consumption. Over the desired UHF band, the LNA increases the average IIP3 obtained with off-state auxiliary transistor by 11.7 dBm.