Jianan Wei, Hongxia Guo, Fengqi Zhang, G. Guo, Chaohui He
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引用次数: 1
Abstract
The single event effects (SEE) in ferroelectric random access memories (FRAM) are investigated and the error modes are analyzed using heavy ions. Under the irradiation of heavy ions with high linear energy transfer (LET) values, data upsets are dominated by "0" to "1" upsets of which the cross section is larger than that of "1" to "0" upsets by an order of magnitude and most upsets are detected in addresses with the all "1" error pattern (FFFFH). In addition, most of the upsets occur in events that involve several consecutively accessed addresses. With the increase of ion LET, the percentage of the data upsets in events involving more than 10 consecutively accessed addresses increases monotonically.
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