A Fast Neutron Monitor Based on Single Event Effects in SRAMs Using Commercial off-the-Shelf Components

L. Obermueller, C. Cazzaniga, S. Kulmiya, C. Frost
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引用次数: 2

Abstract

A fast neutron monitor based on Single Event Upsets in SRAM devices has been designed and tested for use on atmospheric neutron beamlines. Boards with a total memory capacity of up to 16 Mbit are irradiated, and the total number of bit-flips in the memory caused by fast neutron radiation effects is directly proportional to the neutron beam fluence. This system provides a count rate of 0.242 cps/Mbit. A scan of the beam was possible using this monitor, demonstrating that the beam profile is square and uniform.
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基于单事件效应的sram快中子监测器
设计并测试了一种基于SRAM器件中单事件扰动的快中子监测仪,用于大气中子束线。对总存储容量高达16mbit的板子进行辐照,快中子辐射效应引起的存储器中比特翻转总数与中子束通量成正比。系统的计数速率为0.242 cps/Mbit。使用该监视器可以对光束进行扫描,显示光束轮廓是正方形和均匀的。
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