Narrow width effect of ROSIE isolated SOI MOSFET

Abstract

The recent demand for low-power electronics has driven narrow-width MOSFETs into applications. Meanwhile, SOI devices offer significant power reduction as compared with bulk devices due to the reduced parasitic capacitances. Therefore, it is very attractive to apply narrow-width MOSFETs fabricated on SOI substrate in low-power digital and analog design. However, the behavior of narrow-width SOI MOSFETs has never been reported. In this paper, the threshold voltage behavior of narrow-width FD/NFD SOI MOSFETs with ROSIE (Re-Oxidized Silicon Island Edges) isolation is reported for the first time.