Transient behaviors in partially depleted thin film SOI devices

H. Shin, I. Lim, M. Racanelli, W.M. Huang, J. Foerstner, B. Hwang, J. Whitfield, H. Shin, T. Wetteroth, S. Hong, S. Wilson, S. Cheng
{"title":"Transient behaviors in partially depleted thin film SOI devices","authors":"H. Shin, I. Lim, M. Racanelli, W.M. Huang, J. Foerstner, B. Hwang, J. Whitfield, H. Shin, T. Wetteroth, S. Hong, S. Wilson, S. Cheng","doi":"10.1109/SOI.1995.526432","DOIUrl":null,"url":null,"abstract":"The floating-body configuration in SOI devices is desirable because of area efficiency and parasitics reduction. It has been predicted recently that there exists a dynamic floating-body effect in partially depleted SOI devices, which can lead to transient currents during device turn-on/off. This paper presents the observed current transients due to the dynamic floating body effects. The transient behaviors are analyzed and device simulation was done to confirm our analysis.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The floating-body configuration in SOI devices is desirable because of area efficiency and parasitics reduction. It has been predicted recently that there exists a dynamic floating-body effect in partially depleted SOI devices, which can lead to transient currents during device turn-on/off. This paper presents the observed current transients due to the dynamic floating body effects. The transient behaviors are analyzed and device simulation was done to confirm our analysis.
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部分耗尽薄膜SOI器件的瞬态行为
浮体结构是理想的SOI器件,因为面积效率和寄生减少。最近有人预测,在部分耗尽的SOI器件中存在动态浮体效应,这可能导致器件在开/关时产生瞬态电流。本文给出了由于动态浮体效应而观测到的电流瞬态。分析了其瞬态行为,并进行了器件仿真验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs Front and back gate interface-trap generation due to hot carrier stress in fully depleted SOI/MOSFETs SOI material characterization using optical second harmonic generation Minimum parasitic resistance for ultra-thin SOI MOSFET with high-permittivity gate insulator performed by lateral contact structure Transient effects in floating body SOI NMOSFETs
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