Multiple Quantum Well Passive Modelocking of NaCl Color Center Laser

M. Islam, E. Sunderman, I. Bar-Joseph, N. Sauer, T. Chang
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引用次数: 24

Abstract

We passively modelocked a NaCI color center laser (CCL) by using multiple quantum well (MQW) saturable absorbers to produce pulses around 260fsec. The laser is an all solid-state source lasing around 1.6-1.7μm and formed in a single cavity. Silberberg, et al. [1], first modelocked a semiconductor diode laser using MQW’s, and Haus and Silberberg [2] theorized that the fast saturable absorber component plays a major role in the formation of their ~ 1.5psec pulses. This fast absorber component results from MQW absorption bleaching by short-lived excitons formed near the band gap of the MQW. The excitonic lifetime of 200±30fsec measured in our MQW’s [3] is comparable to our pulse widths. Consequently, the fast saturable component dominates the pulse shaping and may limit the pulse width in our experiments.
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NaCl色心激光器的多量子阱被动锁模
利用多量子阱(MQW)可饱和吸收体对NaCI色心激光器(CCL)进行了被动模型锁定,产生了260fsec左右的脉冲。该激光器为全固态源,激光器直径为1.6 ~ 1.7μm,形成于单腔内。Silberberg等人[1]首先使用MQW对半导体二极管激光器进行了模型锁定,Haus和Silberberg[2]从理论上推断,快速可饱和吸收元件在形成~ 1.5psec脉冲中起着主要作用。这种快速吸收元件是由MQW的带隙附近形成的短寿命激子吸收漂白产生的。在我们的MQW中测量到的激子寿命为200±30fsec[3],与我们的脉冲宽度相当。因此,快速饱和元件在脉冲整形中占主导地位,并可能在我们的实验中限制脉冲宽度。
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