{"title":"Comparison of TID Response of Micron Technology Single-Level Cell High Density NAND Flash Memories","authors":"D. Nguyen, F. Irom","doi":"10.1109/REDW.2010.5619508","DOIUrl":null,"url":null,"abstract":"Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1 Gb, 2 Gb, 4 Gb and 8 Gb NAND flash memories are reported. Scaling effects in TID response is discussed. Floating gates bit error scales with feature size. Also, charge pump TID degradation and standby current improves with scaling.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"198 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1 Gb, 2 Gb, 4 Gb and 8 Gb NAND flash memories are reported. Scaling effects in TID response is discussed. Floating gates bit error scales with feature size. Also, charge pump TID degradation and standby current improves with scaling.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
