T. Fache, M. Moulin, I. Charlet, Z. Chalupa, J. Raskin, F. Allibert, C. Plantier, F. Gaillard, L. Hutin
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引用次数: 0
Abstract
This paper shows the effect of buried PN junctions on the performances of inductors, and investigates the limitation of the subsequent substrate losses. We provide a simple and robust model that enables a precise evaluation of the substrate losses for devices fabricated on various substrates, and using various PN junctions implantation conditions. We point out that buried PN junctions are very efficient to counter the parasitic surface conduction, increasing the quality factor of inductors by more than 30% in the best experimental conditions. However, this integration does not reach the same performance level as trap rich substrates measured in the same conditions.