Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production

T. Lee, K. Yamane, L. Y. Hau, R. Chao, N. L. Chung, V. B. Naik, K. Sivabalan, J. Kwon, Jia Hao Lim, W. Neo, K. Khua, N. Thiyagarajah, S. H. Jang, B. Behin-Aein, E. Toh, Y. Otani, D. Zeng, N. Balasankaran, L. C. Goh, Timothy Ling, J. Hwang, Lei Zhang, Rachel Low, Soon Leng Tan, C. Seet, J. W. Ting, Stanley Ong, Y. You, S. Woo, E. Quek, S. Siah
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引用次数: 5

Abstract

In the era of embedded MRAM (eMRAM) technology evolution for the replacement of eFlash and SRAM, the correlation between magnetic immunity (MI) and eMRAM reliability must be well understood to realize the mass production. In this paper, we have classified the types of MIs and also established the MI guidelines for eMRAM product reliability for the first time. From 40Mb eMRAM package-level data, our proposed MI specifications guarantee the 10 years of reliability at operating temperatures ranging from -40°C to 150°C, which covers all industrial-grade and automotive-grade-1 applications.
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实现批量生产的嵌入式MRAM可靠性磁抗扰度准则
在取代eFlash和SRAM的嵌入式MRAM (eMRAM)技术发展的时代,为了实现批量生产,必须充分了解磁抗扰度(MI)与eMRAM可靠性之间的相关性。本文对eMRAM产品可靠性的MI类型进行了分类,并首次建立了eMRAM产品可靠性的MI指南。从40Mb eMRAM封装级数据,我们提出的MI规格保证了在-40°C至150°C的工作温度下10年的可靠性,涵盖了所有工业级和汽车一级应用。
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