High-Efficiency GaAs Solar Cell Optimization by Theoretical Simulation

Fernando D. Silva, D. Micha
{"title":"High-Efficiency GaAs Solar Cell Optimization by Theoretical Simulation","authors":"Fernando D. Silva, D. Micha","doi":"10.1109/SBMicro.2019.8919411","DOIUrl":null,"url":null,"abstract":"Theoretical simulations of solar cell current-voltage characteristics provide important information for a better design of the device structure, such as layers thicknesses and doping levels, in order to obtain high photovoltaic conversion efficiency. The inclusion of precise material parameters is critical to obtain reliable results and detailed understanding of the simulated device operation. In this study, GaAs solar cell structures were simulated by drift-diffusion model with SCAPS-1D in order to optimize the performance under 1 sun illumination. Moreover, we used the published results of some devices as references to infer their structures, as the details are normally not completely disclosed by the authors. To do so, an optimization study was required to probe different materials, thicknesses and doping levels for the layers. With the inferred structure, it was possible to evaluate the possibility of improvements through variation of the structure parameters to achieve even higher efficiencies.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Theoretical simulations of solar cell current-voltage characteristics provide important information for a better design of the device structure, such as layers thicknesses and doping levels, in order to obtain high photovoltaic conversion efficiency. The inclusion of precise material parameters is critical to obtain reliable results and detailed understanding of the simulated device operation. In this study, GaAs solar cell structures were simulated by drift-diffusion model with SCAPS-1D in order to optimize the performance under 1 sun illumination. Moreover, we used the published results of some devices as references to infer their structures, as the details are normally not completely disclosed by the authors. To do so, an optimization study was required to probe different materials, thicknesses and doping levels for the layers. With the inferred structure, it was possible to evaluate the possibility of improvements through variation of the structure parameters to achieve even higher efficiencies.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高效砷化镓太阳能电池的理论模拟优化
太阳能电池电流电压特性的理论模拟为更好地设计器件结构(如层厚度和掺杂水平)提供了重要信息,以获得较高的光伏转换效率。包含精确的材料参数对于获得可靠的结果和对模拟设备操作的详细理解至关重要。本研究利用SCAPS-1D软件对砷化镓太阳能电池结构进行了漂移-扩散模型模拟,以优化其在1个太阳光照下的性能。此外,由于一些器件的细节通常不会被作者完全披露,我们使用了一些已发表的结果作为参考来推断它们的结构。为此,需要进行优化研究,以探测不同的材料、厚度和掺杂水平。根据推断的结构,可以通过改变结构参数来评估改进的可能性,从而实现更高的效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Low Saturation Onset MOS Transistor: an Equivalent Network Synthesis and Electrical properties of polyaniline yielded in nickel sulfate salt A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs Comparasion between TiO2 thin films deposited by DC and RF sputtering. A 4 mm toroidal microtransformer built with wire bonding and MCM technologies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1