{"title":"Modelling of threshold voltage with non-uniform substrate doping [MOSFET]","authors":"K. Lim, X. Zhou","doi":"10.1109/SMELEC.1998.781144","DOIUrl":null,"url":null,"abstract":"A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.1998.781144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction.
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