{"title":"Advanced Microelectronics: the role of SOI","authors":"D. Radack","doi":"10.1109/SOI.1999.819832","DOIUrl":null,"url":null,"abstract":"Silicon-on-insulator (SOI) technology has been developed for electronics in harsh environments and more recently for low power electronics. Over the past few years, DARPA's Advanced Microelectronics Program has sponsored considerable research on 25 nm silicon transistors suitable for highly integrated circuits. Many of the device research efforts under the program are exploiting SOI. The program is described here.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Silicon-on-insulator (SOI) technology has been developed for electronics in harsh environments and more recently for low power electronics. Over the past few years, DARPA's Advanced Microelectronics Program has sponsored considerable research on 25 nm silicon transistors suitable for highly integrated circuits. Many of the device research efforts under the program are exploiting SOI. The program is described here.
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