K. Azuma, A. Kishi, M. Tanigawa, S. Kaneko, T. Naka, A. Ishihawa, K. Iguchi, K. Sakiyama
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引用次数: 3
Abstract
Fully-depleted, ultra-thin SIMOX/CMOS is a suitable technology to achieve low voltage and high speed application because of its capability of low Vth operation. However, large resistivity of diffusion area is an issue. In this paper,a thin salicidation layer was adopted to decrease the sheet resistivity of the ultra-thin SIMOX layer. Good transistor characteristics with sheet resistivity less than one tenth of the non-silicided diffusion resistivity were achieved, and no degradation of the transistor characteristics was observed.
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