{"title":"Advanced device structure for aggressively scaled MOSFETs","authors":"T. Hirarnoto","doi":"10.1109/ICICDT.2004.1309908","DOIUrl":null,"url":null,"abstract":"In this paper, we present our recent research work on device structures in the 10 nm scale. Considering the short channel immunity in the nanoscale regime, the fully-depleted SOI structures, including double-gate structures and FinFETs, have been selected. The optimum device structures have been discussed in terms of short channel effect, low power, and device characteristic fluctuations. The idea of \"body-effect conscious\" device design is proposed.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we present our recent research work on device structures in the 10 nm scale. Considering the short channel immunity in the nanoscale regime, the fully-depleted SOI structures, including double-gate structures and FinFETs, have been selected. The optimum device structures have been discussed in terms of short channel effect, low power, and device characteristic fluctuations. The idea of "body-effect conscious" device design is proposed.
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