A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors

Wogong Zhang, Kaiheng Ye, S. Bechler, K. Ulbricht, M. Oehme, E. Kasper, J. Schulze
{"title":"A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors","authors":"Wogong Zhang, Kaiheng Ye, S. Bechler, K. Ulbricht, M. Oehme, E. Kasper, J. Schulze","doi":"10.1109/ISTDM.2014.6874649","DOIUrl":null,"url":null,"abstract":"This study presents calibration of a self-built 40 GHz measurement setup using vector network analyzer and Mach-Zehnder modulator. The setup is used for frequency response characterization of Ge PIN photodetectors.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874649","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This study presents calibration of a self-built 40 GHz measurement setup using vector network analyzer and Mach-Zehnder modulator. The setup is used for frequency response characterization of Ge PIN photodetectors.
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一种可靠的40 GHz光电系统用于Ge PIN光电探测器的频率响应表征
本文介绍了利用矢量网络分析仪和马赫-曾德调制器对自建的40ghz测量装置进行校准。该装置用于锗PIN光电探测器的频率响应表征。
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