{"title":"Epitaxy of light emitting SiGeSn materials using novel precursors","authors":"J. Kouvetakis, J. Menéndez","doi":"10.1109/ISTDM.2014.6874700","DOIUrl":null,"url":null,"abstract":"Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. In this presentation we review synthesis, optical properties and preliminary device studies of crystalline Ge1-ySny and Ge1-X-ySiiSny alloys developed at ASU.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. In this presentation we review synthesis, optical properties and preliminary device studies of crystalline Ge1-ySny and Ge1-X-ySiiSny alloys developed at ASU.
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