Calibration of a 2D numerical model for the optimization of LOCOS type isolations by response surface methodology

Abstract

The models used for process simulation must be carefully calibrated in order to insure correct prediction of the topography and doping/stress profiles of microelectronic devices. With the current miniaturization of these devices, the requirements for the accuracy of the simulated results become greater, placing more constraints on the calibration methodology. This is particularly the case for the silicon oxidation model, which is involved in numerous fundamental steps of an industrial process. In this work, using the response surface methodology, a viscoelastic oxidation model has been calibrated on a wide range of process conditions which has allowed the optimization of LOCOS type isolation structures for a 0.35 /spl mu/m CMOS technology.