{"title":"Photoreflectance Spectroscopy of InGaAs/GaAs Strained Superlattice Waveguides","authors":"G. Sonek, L. Dawson","doi":"10.1364/qwoe.1989.tue3","DOIUrl":null,"url":null,"abstract":"In addition to quantum confinement [1], the effects of strain, resulting from the growth of lattice-mismatched materials, provide another means of tailoring the properties and performance of optoelectronic devices [2-6]. New properties for device applications, including birefringence and piezoelectric effects [7], are expected.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.tue3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In addition to quantum confinement [1], the effects of strain, resulting from the growth of lattice-mismatched materials, provide another means of tailoring the properties and performance of optoelectronic devices [2-6]. New properties for device applications, including birefringence and piezoelectric effects [7], are expected.
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