{"title":"A high performance lateral bipolar transistor from a SOI CMOS process","authors":"M. Chan, S. Fung, C. Hu, P. Ko","doi":"10.1109/SOI.1995.526475","DOIUrl":null,"url":null,"abstract":"A new bipolar device structure fabricated using a SOI CMOS process has been studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A new bipolar device structure fabricated using a SOI CMOS process has been studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme.
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