Distributed modeling approach applied to the power PIN diode using VHDL-AMS

A. Hneine, J. Massol, P. Tounsi, P. Austin
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引用次数: 1

Abstract

This paper will present one of the first implementations in VHDL-AMS of a compact truly distributed modeling approach applied to the Power PIN diode. This approach is based on the unidimensional solution of the ambipolar diffusion equation describing the charges behavior in the low doped zone within the device. The method allows to transform this equation in space and time into a finite set of differential equations in time only. The adaptation of the compact model to VHDL-AMS language is demonstrated by the implentation into Questa ADMS simulator. To validate the compact model, simulation results will be compared with experimental results. The consistency of the results obtained from the simulation of the diode in a simple chopper circuit shows the efficiency and robustness of the model.
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基于VHDL-AMS的功率管脚二极管分布式建模方法的应用
本文将介绍应用于功率PIN二极管的紧凑真正分布式建模方法在VHDL-AMS中的首次实现之一。该方法基于描述器件内低掺杂区电荷行为的双极性扩散方程的一维解。该方法允许将该方程在空间和时间上转换为仅在时间上的有限微分方程集。通过在Questa ADMS模拟器中的实现,证明了紧凑模型对VHDL-AMS语言的适应性。为了验证紧凑模型,将仿真结果与实验结果进行比较。简单斩波电路中二极管仿真结果的一致性表明了该模型的有效性和鲁棒性。
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