Fabrication of Resonant Tunneling Diodes for Switching Applications

Abstract

For digital circuit applications such as binary and multi-level logic circuits, device isolation is required to integrate several devices on chip. Microwave circuit applications such as mixers, and frequency multipliers require a low loss nonconducting substrate for on-chip integrations of high quality transmission lines and other passive microwave structures. We have demonstrated a fabrication process which produces high quality RTD’s with a maximum frequency of oscillation above 200 GHz in a process suitable for switching applications, integrations of devices and microwave structures