K. Kruckmeyer, Elisa Morozumi, R. Eddy, T. Trinh, Tom Santiago, P. Maillard
{"title":"Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference","authors":"K. Kruckmeyer, Elisa Morozumi, R. Eddy, T. Trinh, Tom Santiago, P. Maillard","doi":"10.1109/REDW.2010.5619582","DOIUrl":null,"url":null,"abstract":"National Semiconductor's 100 krad(Si) low dose rate qualified, 2.5V precision reference, LM4050WG2.5RLQV, was put through heavy ion testing and an enhanced low dose rate sensitivity (ELDRS) characterization. The results are presented here.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
National Semiconductor's 100 krad(Si) low dose rate qualified, 2.5V precision reference, LM4050WG2.5RLQV, was put through heavy ion testing and an enhanced low dose rate sensitivity (ELDRS) characterization. The results are presented here.
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