CHARGE EMISSION AND ACCUMULATION IN MULTIPLE-PULSE DAMAGE OF SILICON.

Y. Jhee, M. Becker, R. Walser
{"title":"CHARGE EMISSION AND ACCUMULATION IN MULTIPLE-PULSE DAMAGE OF SILICON.","authors":"Y. Jhee, M. Becker, R. Walser","doi":"10.1520/STP23114S","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":212922,"journal":{"name":"National Bureau of Standards, Special Publication","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1986-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"National Bureau of Standards, Special Publication","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1520/STP23114S","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
硅多脉冲损伤中的电荷发射与积累。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Preparation and certification of SRM-2530, ellipsometric parameters Δ and ψ and derived thickness and refractive index of a silicon dioxide layer on silicon SURFACE POTENTIAL AS A LASER DAMAGE DIAGNOSTIC. CHARGE EMISSION AND ACCUMULATION IN MULTIPLE-PULSE DAMAGE OF SILICON. Charge Emission and Related Precursor Events Associated with Laser Damage Strengthening CsI Crystals for Optical Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1