Wei Liang, R. Gauthier, S. Mitra, You Li, Chen Yan
{"title":"Study of Internal Latchup Behaviors in Advanced Bulk FinFET Technology","authors":"Wei Liang, R. Gauthier, S. Mitra, You Li, Chen Yan","doi":"10.1109/IPFA47161.2019.8984897","DOIUrl":null,"url":null,"abstract":"In this paper, Internal Latchup (ILU) behaviors are studied in an advanced bulk FinFET technology. The methodology of the ILU development and characterization are introduced and the ILU characteristics of thin oxide (SG) and thick oxide (EG) victim devices are discussed comprehensively. Comparison between 7nm and 14nm Bulk FinFET technology has been made on ILU characteristics.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, Internal Latchup (ILU) behaviors are studied in an advanced bulk FinFET technology. The methodology of the ILU development and characterization are introduced and the ILU characteristics of thin oxide (SG) and thick oxide (EG) victim devices are discussed comprehensively. Comparison between 7nm and 14nm Bulk FinFET technology has been made on ILU characteristics.
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