{"title":"Junction induced variation and reliability for ultra-thin-body and bulk oxide MOSFETs","authors":"W. Yeh, W. Chang, Po-Ying Chen, Cheng-li Lin","doi":"10.1109/IPFA.2014.6898123","DOIUrl":null,"url":null,"abstract":"In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving capability and sub-threshold swing, but makes the transistor forward and reverse characteristics unsymmetrical. Compared to high dose junction profile UTBB-SOI device, low dose junction profile device is less sensitive to substrate bias effect. After hot carrier stressing, low junction dose device with lower impact ionization exhibits better device reliability than high junction dose one.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving capability and sub-threshold swing, but makes the transistor forward and reverse characteristics unsymmetrical. Compared to high dose junction profile UTBB-SOI device, low dose junction profile device is less sensitive to substrate bias effect. After hot carrier stressing, low junction dose device with lower impact ionization exhibits better device reliability than high junction dose one.
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