Research on crosstalk issue of through silicon via for 3D integration

2015 28th IEEE International System-on-Chip Conference (SOCC) Pub Date : 2015-09-01 DOI:10.1109/SOCC.2015.7406991

Ting Kang, Zhaowen Yan, Wei Zhang, Jianwei Wang

引用次数: 4

Abstract

This paper focused on the crosstalk analysis of through silicon via (TSV) for 3D integration. It started with the TSV electrical character. A GS TSV pair was established in HFSS and its electrical model was created in ADS. The S-parameter showed a good match between the two methods which validated the electrical model. Crosstalk analysis was an important part in this paper. First, the S-parameter of GSSG-BUMP-RDL model was simulated from 0.1GHz to 20GHz in HFSS, and the NEXT and FEXT crosstalk at 1GHz and 10GHz were given respectively in time domain. Then we added more ground TSV to the model to suppress the crosstalk. And it showed a better capacity to suppress the FEXT crosstalk. Finally, another improved model which used a ground plane to replace the ground RDL was carried out, and it resulted in a better performance to decrease the NEXT crosstalk.

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三维集成中硅通孔串扰问题研究

本文主要研究了三维集成中硅通孔(TSV)的串扰分析。它从TSV电气字符开始。在HFSS中建立了GS - TSV对，在ADS中建立了GS - TSV对的电模型，两种方法的s参数吻合良好，验证了电模型的正确性。串声分析是本文的重要组成部分。首先，在HFSS中对GSSG-BUMP-RDL模型在0.1GHz ~ 20GHz范围内的s参数进行了仿真，分别给出了1GHz和10GHz时的NEXT和ext串扰。然后我们在模型中加入更多的地面TSV来抑制串扰。并且显示出较好的抑制ext串扰的能力。最后，提出了一种采用地平面代替地RDL的改进模型，该模型在降低NEXT串扰方面取得了较好的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 28th IEEE International System-on-Chip Conference (SOCC)

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