{"title":"Radiation Tolerance of 3-D NAND Flash Based Neuromorphic Computing System","authors":"M. Hasan, M. Raquibuzzaman, I. Chatterjee, B. Ray","doi":"10.1109/IRPS45951.2020.9128219","DOIUrl":null,"url":null,"abstract":"In this paper we show the effectiveness of a multi-level-cell 3-D NAND flash chip as a weight storage device for a neuromorphic computing system under radiation environment. We find that the error-correction codes can be avoided for storing model weights in 3-D NAND for enabling low-power computing applications without sacrificing much accuracy (radiation dose <10k rad). Additionally, radiation induced BER data shows layer-to-layer variations, which can be utilized in favor of improving neural network’s accuracy.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9128219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper we show the effectiveness of a multi-level-cell 3-D NAND flash chip as a weight storage device for a neuromorphic computing system under radiation environment. We find that the error-correction codes can be avoided for storing model weights in 3-D NAND for enabling low-power computing applications without sacrificing much accuracy (radiation dose <10k rad). Additionally, radiation induced BER data shows layer-to-layer variations, which can be utilized in favor of improving neural network’s accuracy.