W. Chien, Y. C. Chen, K. P. Chang, E. Lai, Y. Yao, P. Lin, J. Gong, S. Tsai, S. Hsieh, C. F. Chen, K. Hsieh, R. Liu, Chih-Yuan Lu
{"title":"Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM)","authors":"W. Chien, Y. C. Chen, K. P. Chang, E. Lai, Y. Yao, P. Lin, J. Gong, S. Tsai, S. Hsieh, C. F. Chen, K. Hsieh, R. Liu, Chih-Yuan Lu","doi":"10.1109/IMW.2009.5090599","DOIUrl":null,"url":null,"abstract":"The multi-level operation of WO\n x\n based RRAM has been investigated. Improvement of our WO\n x\n process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
The multi-level operation of WO
x
based RRAM has been investigated. Improvement of our WO
x
process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.
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