T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
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引用次数: 1
Abstract
We investigated the crystalline structure of Ge1-x-ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1-x-ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1-x-ySixSny layer even with small misfit strain.
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