K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, S. Zaima
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引用次数: 3
Abstract
We achieved the world's first epitaxial growth of a Ge1-x-ySnxCy layer, and investigated the effect of Sn incorporation on the growth of Ge1-xCx. Sn incorporation can decrease the epitaxial temperature of Ge1-xCx layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge1-x-ySnxCy layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.
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