{"title":"High electron mobility n-channel Ge MOSFETs with sub-nm EOT","authors":"A. Toriumi, C. Lee, Cimang Lu, T. Nishimura","doi":"10.1109/ISTDM.2014.6874697","DOIUrl":null,"url":null,"abstract":"Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
