N. Matine, M. Dvorak, X.G. Xu, S. Watkins, C. Bolognesi
{"title":"InP/GaAsSb/InP double heterojunction bipolar transistors with high cut-off frequencies and breakdown voltages","authors":"N. Matine, M. Dvorak, X.G. Xu, S. Watkins, C. Bolognesi","doi":"10.1109/ICIPRM.1999.773663","DOIUrl":null,"url":null,"abstract":"In this work, we report on the DC and microwave performance of MOCVD-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs) with various collector thicknesses. The cut-off frequencies (and breakdown voltages) are 106 GHz (8 V), 82 GHz (10 V) and 40 GHz (15 V) for the 2000 /spl Aring/, 3000 /spl Aring/ and 5000 /spl Aring/, lightly doped collectors. The 106 GHz, which is the best f/sub T/ ever reported in this material system, is obtained while maintaining a relatively high breakdown voltage (BV/sub CEO/=8 V). The lower cut-off frequencies obtained for the 3000 /spl Aring/ and 5000 /spl Aring/, collectors are attributed to the longer transit time in the collector and also to the Kirk like limitation brought about by high current densities in the thicker collectors.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this work, we report on the DC and microwave performance of MOCVD-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs) with various collector thicknesses. The cut-off frequencies (and breakdown voltages) are 106 GHz (8 V), 82 GHz (10 V) and 40 GHz (15 V) for the 2000 /spl Aring/, 3000 /spl Aring/ and 5000 /spl Aring/, lightly doped collectors. The 106 GHz, which is the best f/sub T/ ever reported in this material system, is obtained while maintaining a relatively high breakdown voltage (BV/sub CEO/=8 V). The lower cut-off frequencies obtained for the 3000 /spl Aring/ and 5000 /spl Aring/, collectors are attributed to the longer transit time in the collector and also to the Kirk like limitation brought about by high current densities in the thicker collectors.
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