J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer
{"title":"High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications","authors":"J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer","doi":"10.1109/ICIPRM.1999.773715","DOIUrl":null,"url":null,"abstract":"We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
