R. Driad, W. Mckinnon, S. Mcalister, A. Renaud, T. Garanzotis, A. Springthorpe
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引用次数: 0
Abstract
We report the design and performance of InAlAs/InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) with a composite-emitter (CE) design. The CE-DHBT structure combines various advantages of conventional InAlAs/InGaAs and InGaAs/InP HBTs. It allows passivation of the extrinsic base with a selective etch, and also allows the possibility of enhancing performance through nonequilibrium transport in the base. The CE-DHBT structure demonstrated an offset voltage (/spl Delta/V/sub CE0/) of 0.25 V with a saturation voltage (V/sub SAT/) of 0.6 V and a dc current gain of 25 for a base doping level of 7/spl times/10/sup 19/ cm/sup -3/.
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