{"title":"Accounting for experimentally observed transients in simulation of partially-depleted SOI MOSFET's","authors":"A. Wei, M. Sherony, D. Antoniadis","doi":"10.1109/SOI.1995.526433","DOIUrl":null,"url":null,"abstract":"This paper has shown that a unique set of carrier lifetime and impact ionization rate can be used to account for both the transient behavior and DC I-V characteristics of a partially-depleted SOI MOSFET. Operation of these devices at low to moderate drain voltages ( 1.0 to 2.0 V) was shown to be strongly related to both impact ionization rate and carrier lifetime.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper has shown that a unique set of carrier lifetime and impact ionization rate can be used to account for both the transient behavior and DC I-V characteristics of a partially-depleted SOI MOSFET. Operation of these devices at low to moderate drain voltages ( 1.0 to 2.0 V) was shown to be strongly related to both impact ionization rate and carrier lifetime.
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