C. Su, M. Armstrong, S. Chugh, M. El-tanani, Hannes Greve, Hai Li, M. Maksud, Benjamin Orr, C. Perini, J. Palmer, L. Paulson, S. Ramey, J. Waldemer, Yang Yang, D. Young
{"title":"Reliability Characterization for 12 V Application Using the 22FFL FinFET Technology","authors":"C. Su, M. Armstrong, S. Chugh, M. El-tanani, Hannes Greve, Hai Li, M. Maksud, Benjamin Orr, C. Perini, J. Palmer, L. Paulson, S. Ramey, J. Waldemer, Yang Yang, D. Young","doi":"10.1109/IRPS45951.2020.9128314","DOIUrl":null,"url":null,"abstract":"The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the technology reliability requirements of the lower voltage components to demonstrate product-level reliability capabilities. The reliability of components such as transistors, well junctions, back-end dielectrics and MIMCAPs is thoroughly characterized and proven robust throughout a 10-year lifetime. The results demonstrate a reliable technology capability that is compliant with industrial standards to enable high-voltage design requirements.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"67 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9128314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the technology reliability requirements of the lower voltage components to demonstrate product-level reliability capabilities. The reliability of components such as transistors, well junctions, back-end dielectrics and MIMCAPs is thoroughly characterized and proven robust throughout a 10-year lifetime. The results demonstrate a reliable technology capability that is compliant with industrial standards to enable high-voltage design requirements.
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