{"title":"Performance Analysis Of Metalloid Source/ Drain GaAs-FinFET For Analog/RF Applications","authors":"Yogesh Pratap, Reshma Sinha, Praveen Pal, Sarul Malik, S. Kabra, Sachin Kumar","doi":"10.1109/ICDCSYST.2018.8605159","DOIUrl":null,"url":null,"abstract":"In this paper, FinFET device with metalloid source/drain and GaAs channel has been proposed for Analog/RF Applications. Drain current, transconductance, intrinsic gain, device efficiency, cut-off frequency, and VIP3 has been analysed by using ATLAS 3D TCAD simulator. A comprehensive comparative analysis has been carried out between FinFET device with and without metalloid source/drain. The drastic enhancement in device performance makes Metalloid-S/D-GaAs FinFET as a ultimate novel device structure for high-frequency applications.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2018.8605159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, FinFET device with metalloid source/drain and GaAs channel has been proposed for Analog/RF Applications. Drain current, transconductance, intrinsic gain, device efficiency, cut-off frequency, and VIP3 has been analysed by using ATLAS 3D TCAD simulator. A comprehensive comparative analysis has been carried out between FinFET device with and without metalloid source/drain. The drastic enhancement in device performance makes Metalloid-S/D-GaAs FinFET as a ultimate novel device structure for high-frequency applications.
本文提出了一种具有金属状源/漏极和GaAs通道的FinFET器件，用于模拟/射频应用。利用ATLAS 3D TCAD模拟器对漏极电流、跨导、固有增益、器件效率、截止频率和VIP3进行了分析。对具有和不具有类金属源极/漏极的FinFET器件进行了全面的比较分析。器件性能的急剧提高使Metalloid-S/D-GaAs FinFET成为高频应用的终极新型器件结构。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
