‘Atomistic’ simulation of RTS amplitudes due to single and multiple charged defect states and their interactions

Abstract

We investigate the experimentally observed gate voltage dependence of the step heights induced by charged defects. Taking into account the intrinsic variability source of random dopants, our simulations confirm that the location of the defect with respect to the critical current percolation path affects the response of the trap to the applied gate bias. However, the details of the bias dependence of this response depend on the exact location relative to the percolation path. Furthermore, the impact of the various charge states of the defect on the step heights is investigated.