R. Fornari, T. Gorog, J. Jiménez, E. de la Puente, I. Grant, M. Brozel, M. Nicholls
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引用次数: 0
Abstract
A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterisation showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 10/sup 8/ /spl Omega/ cm and mobilities in the range 3000-4000 cm/sup 2//Vs. PL and resistivity mapping showed that the short range uniformity is excellent but that sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity. The gradients are believed to be associated with temperature gradients inside the annealing furnace.
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