Multi gated device architectures advances, advantages and challenges

Abstract

Device architectures incorporating multiple gate structures have been proposed to allow transistor scaling beyond the planar MCSFET integrations. These device architectures can improve performance such as better short channel performance and reduced leakage. In addition the additional channel surface and gate electrodes offers new circuit possibilities such as dynamic threshold voltage control and an RF mixer are demonstrated. It is desirable to fabricate multi-gated devices with the single gate on multiple sides and multiple gate electrodes this has been demonstrated successfully.